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March 2009
FDB3860
N-Channel PowerTrench ? MOSFET
100 V, 30 A, 37 m ?
Features
Max r DS(on) = 37 m ? at V GS = 10 V, I D = 5.9 A
High performance trench technology for extremely low r DS(on)
100% UIL tested
RoHS Compliant
D
G
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench ? process. This part is
tailored for low r DS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion
Synchronous Rectifier
D
G
S
TO-263AB
FDB Series
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
S
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
T C = 25 °C
Ratings
100
±20
30
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
6.4
A
-Pulsed
60
E AS
Single Pulse Avalanche Energy
(Note 3)
96
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
71
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.75
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB3860
Device
FDB3860
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
?2009 Fairchild Semiconductor Corporation
FDB3860 Rev . C
1
www.fairchildsemi.com
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